采用软开关技术的非隔离三电平双向DC-DC变换器

2022 4th International Conference on Smart Power & Internet Energy Systems (SPIES) Pub Date : 2022-12-09 DOI:10.1109/SPIES55999.2022.10082315

Yunfeng Xu, Weimin Wu, Jianming Chen, Gang Lu

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引用次数: 1

摘要

随着储能系统向大功率、高压、高开关频率方向发展，开关需要承受更高的电压应力和可能的高功率损耗。本文提出了一种以金属氧化物半导体场效应晶体管(MOSFET)为开关器件的非隔离三电平双向DC-DC变换器，采用适当的控制策略实现软开关控制。由于软开关技术和小导通电阻mosfet，与使用绝缘栅双极晶体管(IGBT)的硬开关拓扑结构相比，该方案可以显着提高效率和功率密度。仿真结果验证了所提出的三电平双向变换器的正确性和控制方法的合理性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Non-isolated Three-Level Bidirectional DC-DC Converter with Soft Switching Technique

With the development of energy storage systems towards high power, high voltage and high switching frequency, the switches need to withstand higher voltage stress and possible high power loss. In this paper, a non-isolated three-level bidirectional DC-DC converter using the metal-oxide-semiconductor field-effect transistor (MOSFET) as the switches is proposed, where an appropriate control strategy is adopted to achieve soft-switching control. As a result of the soft switching technology and small on-resistance MOSFETs, this scheme can improve efficiency and power density significantly, compared with hard-switching topologies using the insulated gate bipolar transistor (IGBT). Simulation results have verified the correctness of the proposed three-level bidirectional converter and the rationality of the control method.

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2022 4th International Conference on Smart Power & Internet Energy Systems (SPIES)

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