{"title":"连续域转移电子振荡器","authors":"J. A. Cooper, K. Thornber","doi":"10.1109/MWSYM.1985.1132001","DOIUrl":null,"url":null,"abstract":"We describe a new monolithic millimeter-wave semiconductor oscillator which is capable of supporting a contiguous sequence of charge domains in the drift channel. The frequency is not determined by a transit time effect, but rather by the spacing between adjacent domains, and can be electrically tuned from a few gigahertz to a few hundred gigahertz.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Contiguous-Domain Transferred-Electron Oscillators\",\"authors\":\"J. A. Cooper, K. Thornber\",\"doi\":\"10.1109/MWSYM.1985.1132001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe a new monolithic millimeter-wave semiconductor oscillator which is capable of supporting a contiguous sequence of charge domains in the drift channel. The frequency is not determined by a transit time effect, but rather by the spacing between adjacent domains, and can be electrically tuned from a few gigahertz to a few hundred gigahertz.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1132001\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1132001","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
We describe a new monolithic millimeter-wave semiconductor oscillator which is capable of supporting a contiguous sequence of charge domains in the drift channel. The frequency is not determined by a transit time effect, but rather by the spacing between adjacent domains, and can be electrically tuned from a few gigahertz to a few hundred gigahertz.
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