柔性光电器件用自组装聚合物溶液处理低维纳米材料(演示记录)

Cheolmin Park
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摘要

由复杂但系统的层次相互作用驱动的自组装为制造功能的微米或纳米尺度的模式结构提供了一个合格的替代方案,这些结构已经潜在地用于各种有机和纳米技术器件。自组装纳米结构是由合成聚合物系统产生的,如可控聚合物共混物、半结晶聚合物和嵌段共聚物,这不仅是因为它们可以进化的纳米结构的多样性,而且还因为这些结构在外部刺激下的可控制性。在本报告中,介绍了基于溶液处理的低维纳米材料的各种新型光电子材料和器件,如网络化碳纳米管(CNTs)、还原氧化石墨烯(rGOs)和二维过渡金属二硫族化合物(TMDs),包括场效应晶体管、电致发光器件、非易失性存储器和光电探测器。例如,网状碳纳米管和荧光聚合物的纳米复合材料在交流电(AC)下产生了高效的场致电致发光层,作为下一代显示器和照明的潜在候选材料。此外,用于制造氧化石墨烯和TMD纳米混合薄膜的可扩展和简单策略分别允许高性能和机械柔性的非易失性电阻性聚合物存储器件和宽带光电探测器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Solution-processed low dimensional nanomaterials with self-assembled polymers for flexible photo-electronic devices (Presentation Recording)
Self assembly driven by complicated but systematic hierarchical interactions offers a qualified alternative for fabricating functional micron or nanometer scale pattern structures that have been potentially useful for various organic and nanotechnological devices. Self assembled nanostructures generated from synthetic polymer systems such as controlled polymer blends, semi-crystalline polymers and block copolymers have gained a great attention not only because of the variety of nanostructures they can evolve but also because of the controllability of these structures by external stimuli. In this presentation, various novel photo-electronic materials and devices are introduced based on the solution-processed low dimensional nanomaterials such as networked carbon nanotubes (CNTs), reduced graphene oxides (rGOs) and 2 dimensional transition metal dichalcogenides (TMDs) with self assembled polymers including field effect transistor, electroluminescent device, non-volatile memory and photodetector. For instance, a nanocomposite of networked CNTs and a fluorescent polymer turned out an efficient field induced electroluminescent layer under alternating current (AC) as a potential candidate for next generation displays and lightings. Furthermore, scalable and simple strategies employed for fabricating rGO as well as TMD nanohybrid films allowed for high performance and mechanically flexible non-volatile resistive polymer memory devices and broad band photo-detectors, respectively.
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