重离子辐射硬化FPGA中使用重构存储器洗涤器和硬件冗余的影响分析

Á. B. de Oliveira, F. Benevenuti, L. A. C. Benites, G. Rodrigues, F. Kastensmidt, N. Added, V. Aguiar, N. Medina, M. Silveira, Cédric Debarge
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引用次数: 0

摘要

这项工作研究了在NanoXplore基于辐射硬化sram的FPGA的横截面中使用内置配置存储器擦洗器和三模块硬件冗余的影响。研究了不同设计版本在重离子作用下发生的瞬态错误、失效和超时。计算的动态截面与基于sram的抗辐射fpga的预期数量级一致。结果表明,最可靠的配置是使用dsp作为操作逻辑,并应用完全设计冗余与擦洗相结合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Analyzing the Influence of using Reconfiguration Memory Scrubber and Hardware Redundancy in a Radiation Hardened FPGA under Heavy Ions
This work investigates the influence of using the built-in configuration memory scrubber and triple modular hardware redundancy in the cross section of a radiation-hardened SRAM-based FPGA from NanoXplore. Different designs versions are investigated under heavy ions for the occurrence of transient errors, failures, and timeouts. The calculated dynamic cross-sections are in agreement with the expected order of magnitude of radiation hardened SRAM-based FPGAs. Results show that the most reliable configuration is using DSPs for the operational logic and applying full design redundancy combined with scrubbing.
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