{"title":"一种计算微波MESFET混频器噪声系数的新方法","authors":"J. Dreifuss, A. Madjar, A. Bar-Lev","doi":"10.1109/EUMA.1987.333779","DOIUrl":null,"url":null,"abstract":"A new computer analysis method is presented by which the noise contributions of the various noise sources within a MESFET mixer can be determined and its overall single side-band and double sideband noise figure and noise temperature calculated. The method utilizes a frequency conversion matrix of a MESFET mixer which was described previously. The simulation program was run for a mixer circuit based on NEC720 transistor and the results for the noise sources and noise figure behaviour as functions of the LO power are presented and compared to measured values. An optimal operating point, from the standpoint of minimum noise figure, can thus be determined for transistor biasing conditions and the LO input power.","PeriodicalId":208245,"journal":{"name":"1987 17th European Microwave Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A Novel Method for Calculating the Noise Figure of Microwave MESFET Mixers\",\"authors\":\"J. Dreifuss, A. Madjar, A. Bar-Lev\",\"doi\":\"10.1109/EUMA.1987.333779\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new computer analysis method is presented by which the noise contributions of the various noise sources within a MESFET mixer can be determined and its overall single side-band and double sideband noise figure and noise temperature calculated. The method utilizes a frequency conversion matrix of a MESFET mixer which was described previously. The simulation program was run for a mixer circuit based on NEC720 transistor and the results for the noise sources and noise figure behaviour as functions of the LO power are presented and compared to measured values. An optimal operating point, from the standpoint of minimum noise figure, can thus be determined for transistor biasing conditions and the LO input power.\",\"PeriodicalId\":208245,\"journal\":{\"name\":\"1987 17th European Microwave Conference\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 17th European Microwave Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EUMA.1987.333779\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 17th European Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EUMA.1987.333779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Novel Method for Calculating the Noise Figure of Microwave MESFET Mixers
A new computer analysis method is presented by which the noise contributions of the various noise sources within a MESFET mixer can be determined and its overall single side-band and double sideband noise figure and noise temperature calculated. The method utilizes a frequency conversion matrix of a MESFET mixer which was described previously. The simulation program was run for a mixer circuit based on NEC720 transistor and the results for the noise sources and noise figure behaviour as functions of the LO power are presented and compared to measured values. An optimal operating point, from the standpoint of minimum noise figure, can thus be determined for transistor biasing conditions and the LO input power.
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