亚四分之一微米硅结构和MOSFET器件中电子速度超调的精确估计

Proceedings of the Fifteenth National Radio Science Conference. NRSC '98 (Cat. No.98EX109) Pub Date : 1998-02-24 DOI:10.1109/NRSC.1998.711503

M. El-Saba

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引用次数: 0

摘要

在本文中，我们证明了在亚四分之一微米结构中被夸大的电子速度超调，这在文献中被报道为流体动力学模型(HDM)的一个缺点，主要与电子漂移迁移率作为电子温度的函数的不准确建模有关。我们表明，将电子漂移迁移率表示为电子能量的函数可以减少这种非物理结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Accurate estimation of electron velocity overshoot in sub-quarter micron silicon structures and MOSFET devices

In this paper we show that the exaggerated electron-velocity overshoot in sub-quarter micron structures, which has been reported in the literature as a drawback of the hydrodynamic model (HDM), is primarily related to inaccurate modeling of electron drift mobility as a function of electron temperature. We show that expressing the electron drift mobility as a function of electron energy reduces such unphysical results.

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Proceedings of the Fifteenth National Radio Science Conference. NRSC '98 (Cat. No.98EX109)

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