SAW器件中4英寸直径Li/sub 2/B/sub 4/O/sub 7/单晶的生长

2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121) Pub Date : 2000-10-22 DOI:10.1109/ULTSYM.2000.922556

N. Tsutsui, Y. Ino, K. Imai, N. Senguttuvan, M. Ishii

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引用次数: 3

摘要

我们报道了用于SAW器件应用的4英寸直径和8英寸长四硼酸锂(Li/sub 2/B/sub 4/O/sub 7/)单晶的晶体生长。采用改进的Bridgman法，在氮气气氛下，在嵌铂碳坩埚中沿方向生长晶体。种子晶体与生长的晶体直径相同(108毫米)，长度为25毫米。晶体以高达0.5 mm/h的速度生长。通过化学腐蚀和x射线形貌分析，在铸锭长度的不同位置切割晶片，研究位错密度分布。晶圆中心的EPD (1000 cm/sup 2/)高于外部区域(100 cm/sup 2/)。在3英寸晶圆片上测量了SAW的速度，发现晶圆片不同部位的速度变化在/spl + /0.04%以内。

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Growth of 4-inch diameter Li/sub 2/B/sub 4/O/sub 7/ single crystals for SAW devices

We report crystal growth of 4-inch diameter and 8-inch long lithium tetraborate (Li/sub 2/B/sub 4/O/sub 7/) single crystals for SAW device applications. The crystals were grown by modified Bridgman method along <110> direction using platinum inserted carbon crucible under nitrogen atmosphere. The seed crystals were of same diameter (108 mm) to that of the crystals grown and of 25 mm in length. The crystals were grown at a rate of up to 0.5 mm/h. Wafers were cut at different places along the length of the ingot for studying the dislocation density distribution by chemical etching and X-ray topography. The EPD at center of wafer was found to be higher (1000 cm/sup 2/) than at outer area (100 cm/sup 2/). The SAW velocity has been measured across a 3-inch wafer and it was found that the variation of the velocity at different parts of the wafer was within /spl plusmn/0.04%.

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来源期刊

2000 IEEE Ultrasonics Symposium. Proceedings. An International Symposium (Cat. No.00CH37121)

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