栅极控制应变在InAs n型压电隧道场效应管中的ON电流增强

2019 Silicon Nanoelectronics Workshop (SNW) Pub Date : 2019-06-01 DOI:10.23919/SNW.2019.8782933

Y. Long, Jun Z. Huang, Zhongming Wei, Jun-Wei Luo, Xiangwei Jiang

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引用次数: 0

摘要

利用压电层引起的栅控应变来提高InAs $n -$型压电隧道场效应管的导通电流。采用应变8波段${k\cdot p}$哈密顿量的先进NEGF方法进行输运模拟。我们的研究结果表明，对于最优器件方向$[\overline{\mathbf{1}} \mathbf{1} \mathbf{0}] /(\mathbf{1} \mathbf{0})$，压电tfet可以实现约80%的ION增强。

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ON Current Enhancement by Gate Controlled Strain in The InAs n-Type Piezoelectric Tunnel FETs

The gate-controlled strain induced by piezoelectric layers is used to boost the ON current of InAs $n -$ type piezoelectric tunnel FETs. The advanced NEGF method with strained 8-band ${k\cdot p}$ Hamiltonian is employed in transport simulation. Our results suggest that the Piezo-TFETs can achieve about 80% enhancement of ION for the optimal device orientation $[\overline{\mathbf{1}} \mathbf{1} \mathbf{0}] /(\mathbf{1} \mathbf{1} \mathbf{0})$.

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2019 Silicon Nanoelectronics Workshop (SNW)

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