用于边缘智能的忆阻器-交叉棒神经网络的量化、训练、寄生电阻校正和编程技术

T. Nguyen, Jiyong An, Seokjin Oh, S. N. Truong, K. Min
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引用次数: 3

摘要

在物联网时代,边缘智能对于克服通信和计算能源危机至关重要,如果只使用云计算,这将不可避免。具有内存计算的忆阻器横栅可能适合于实现边缘智能硬件。它们可以执行存储和计算功能,允许开发超越冯·诺伊曼计算机的低功耗计算架构。为了利用忆阻交叉棒实现边缘智能硬件,本文回顾了量化、训练、寄生电阻校正和低功耗交叉棒编程等各种技术。特别地,可以考虑使用忆阻交叉棒来实现具有二值和三值突触的量化神经网络。为了防止忆阻器缺陷降低边缘智能性能,在训练忆阻器横条时,芯片在环训练是有用的。忆阻交叉栅中的另一个不良影响是寄生电阻,如源电阻、线电阻和神经元电阻,随着交叉栅尺寸的增加而恶化。各种电路和软件技术可以补偿寄生电阻,如源电阻、线路电阻和神经元电阻。最后,我们讨论了一种用于学习边缘器件的记忆电阻器交叉栅中突触权值更新的节能编程方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quantization, training, parasitic resistance correction, and programming techniques of memristor-crossbar neural networks for edge intelligence
In the internet-of-things era, edge intelligence is critical for overcoming the communication and computing energy crisis, which is unavoidable if cloud computing is used exclusively. Memristor crossbars with in-memory computing may be suitable for realizing edge intelligence hardware. They can perform both memory and computing functions, allowing for the development of low-power computing architectures that go beyond the von Neumann computer. For implementing edge-intelligence hardware with memristor crossbars, in this paper, we review various techniques such as quantization, training, parasitic resistance correction, and low-power crossbar programming, and so on. In particular, memristor crossbars can be considered to realize quantized neural networks with binary and ternary synapses. For preventing memristor defects from degrading edge intelligence performance, chip-in-the-loop training can be useful when training memristor crossbars. Another undesirable effect in memristor crossbars is parasitic resistances such as source, line, and neuron resistance, which worsens as crossbar size increases. Various circuit and software techniques can compensate for parasitic resistances like source, line, and neuron resistance. Finally, we discuss an energy-efficient programming method for updating synaptic weights in memristor crossbars, which is needed for learning the edge devices.
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