采用MILC工艺制备的低温多晶硅tft中，一种降低泄漏电流的新结构

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194503

T. Ihn, B. Lee, S. Joo

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摘要

采用镍偏置金属诱导横向结晶(MILC)法制备了500 t高温下的多晶硅tft。在不牺牲场效应迁移率的情况下，用Ni偏置MILC制备的多晶硅tft的漏电流比传统Ni自对准MILC制备的漏电流小。漏电流的减小是由于排除了靠近的富镍相

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A new structure for reduction of the leakage currrent in the low temperature Poly-Si TFTs fabricated by the MILC process

Poly-Si TFTs were fabricated at 500 t' by a Ni offset metal induced lateral crystallization(MILC) method. The poly-Si TFTs fabricated by the Ni offset MILC showed lower leakage current than those fabricated by conventional Ni self aligned MILC without sacrifice of field eff ect mobility. The decrease of leakage current resulted from the exclusion of Ni rich phase at near the

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27th European Solid-State Device Research Conference

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