Festim Iseini, M. Inac, A. Malignaggi, A. Peczek, G. Kahmen
{"title":"基于分段Mach-Zehnder调制器的EPIC 250nm BiCMOS单片集成光电发射机","authors":"Festim Iseini, M. Inac, A. Malignaggi, A. Peczek, G. Kahmen","doi":"10.1109/SiRF56960.2023.10046278","DOIUrl":null,"url":null,"abstract":"This paper presents a monolithically integrated optoelectronic transmitter based on a segmented Mach-Zehnder modulator. The chip is fabricated in the 250nmSiGe BiCMOS SG25H5 EPIC technology developed at IHP, a silicon-photonic technology combining 0.25 $\\mu$m CMOS, high-performance npn HBTs (featuring $\\mathrm{f}_{\\mathrm{t}}$/fmax of 210/290 GHz), and a full photonic device set for C/O-band. The chip includes a linear electrical driver, a 5 segments Mach-Zehnder modulator, for a total phase shifter length of 2 mm. Electro-optical time-domain measurements demonstrate open eye diagrams up to 44 Gb/s NRZ. The electro-optical bandwidth is 35 GHz, while the power consumption is 500mW, resulting in a power efficiency of 11.3 pJ/bit at 44 Gb/s. The reported transmitter results in a compact and power efficient solution compared to others in a silicon monolithic approach and comparable to hybrid solutions, within the higher 3 dB electro-optical bandwidth that can be found in the literature.","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithically Integrated Optoelectronic Transmitter based on Segmented Mach-Zehnder Modulator in EPIC 250 nm BiCMOS Technology\",\"authors\":\"Festim Iseini, M. Inac, A. Malignaggi, A. Peczek, G. Kahmen\",\"doi\":\"10.1109/SiRF56960.2023.10046278\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a monolithically integrated optoelectronic transmitter based on a segmented Mach-Zehnder modulator. The chip is fabricated in the 250nmSiGe BiCMOS SG25H5 EPIC technology developed at IHP, a silicon-photonic technology combining 0.25 $\\\\mu$m CMOS, high-performance npn HBTs (featuring $\\\\mathrm{f}_{\\\\mathrm{t}}$/fmax of 210/290 GHz), and a full photonic device set for C/O-band. The chip includes a linear electrical driver, a 5 segments Mach-Zehnder modulator, for a total phase shifter length of 2 mm. Electro-optical time-domain measurements demonstrate open eye diagrams up to 44 Gb/s NRZ. The electro-optical bandwidth is 35 GHz, while the power consumption is 500mW, resulting in a power efficiency of 11.3 pJ/bit at 44 Gb/s. The reported transmitter results in a compact and power efficient solution compared to others in a silicon monolithic approach and comparable to hybrid solutions, within the higher 3 dB electro-optical bandwidth that can be found in the literature.\",\"PeriodicalId\":354948,\"journal\":{\"name\":\"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-01-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SiRF56960.2023.10046278\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046278","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Monolithically Integrated Optoelectronic Transmitter based on Segmented Mach-Zehnder Modulator in EPIC 250 nm BiCMOS Technology
This paper presents a monolithically integrated optoelectronic transmitter based on a segmented Mach-Zehnder modulator. The chip is fabricated in the 250nmSiGe BiCMOS SG25H5 EPIC technology developed at IHP, a silicon-photonic technology combining 0.25 $\mu$m CMOS, high-performance npn HBTs (featuring $\mathrm{f}_{\mathrm{t}}$/fmax of 210/290 GHz), and a full photonic device set for C/O-band. The chip includes a linear electrical driver, a 5 segments Mach-Zehnder modulator, for a total phase shifter length of 2 mm. Electro-optical time-domain measurements demonstrate open eye diagrams up to 44 Gb/s NRZ. The electro-optical bandwidth is 35 GHz, while the power consumption is 500mW, resulting in a power efficiency of 11.3 pJ/bit at 44 Gb/s. The reported transmitter results in a compact and power efficient solution compared to others in a silicon monolithic approach and comparable to hybrid solutions, within the higher 3 dB electro-optical bandwidth that can be found in the literature.
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