SPICE中SiGe dhbt的电流增益建模，包括延迟势垒效应

Proceedings 2007 IEEE SoutheastCon Pub Date : 2007-03-22 DOI:10.1109/SECON.2007.342967

G. Khanduri, B. Panwar

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引用次数: 0

摘要

本文提出了一种利用拟合系数修改OrCAD PSPICE中硅双极管模型参数的方法来模拟硅双极管的电流增益。采用与内基极电阻RB并联的电阻器对SiGe dhbt中基极-集电极异质结的动态缓速势垒效应进行了建模。

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Current gain modeling of SiGe DHBTs in SPICE including retarding potential barrier effect

This paper presents an approach to model the current gain in SiGe DHBTs, by using the fitting coefficients to modify the model parameters of Si BJTs in OrCAD PSPICE. The effect of dynamic retarding potential barrier at base-collector heterojunction in SiGe DHBTs is also modeled by using a resistor in parallel with internal base resistance RB.

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Proceedings 2007 IEEE SoutheastCon

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