功率变换器中碳化硅器件的性能

IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426) Pub Date : 2000-07-14 DOI:10.1109/IWIPP.2000.885172

M. Trivedi, K. Shenai

{"title":"功率变换器中碳化硅器件的性能","authors":"M. Trivedi, K. Shenai","doi":"10.1109/IWIPP.2000.885172","DOIUrl":null,"url":null,"abstract":"This paper describes the characterization of the performance of a 100 V/1 A SiC p-n diode and a 50 V/0.5 A SiC JFET in a DC-DC buck converter. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. The nonidealities of device operation are clearly indicated, and the impact on buck converter operation is described. Improved device design and fabrication techniques are required for further improvement in device performance.","PeriodicalId":359131,"journal":{"name":"IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Performance of silicon carbide devices in power converters\",\"authors\":\"M. Trivedi, K. Shenai\",\"doi\":\"10.1109/IWIPP.2000.885172\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the characterization of the performance of a 100 V/1 A SiC p-n diode and a 50 V/0.5 A SiC JFET in a DC-DC buck converter. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. The nonidealities of device operation are clearly indicated, and the impact on buck converter operation is described. Improved device design and fabrication techniques are required for further improvement in device performance.\",\"PeriodicalId\":359131,\"journal\":{\"name\":\"IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-07-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWIPP.2000.885172\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWIPP.2000.885172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 7

摘要

本文描述了用于DC-DC降压变换器的100 V/1 a SiC p-n二极管和50 V/0.5 a SiC JFET的性能表征。SiC材料缺陷和工艺技术的基础研究是实现材料净化的重要手段。明确指出了器件运行的非理想性，并描述了其对降压变换器运行的影响。为了进一步提高器件性能，需要改进器件设计和制造技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance of silicon carbide devices in power converters

This paper describes the characterization of the performance of a 100 V/1 A SiC p-n diode and a 50 V/0.5 A SiC JFET in a DC-DC buck converter. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. The nonidealities of device operation are clearly indicated, and the impact on buck converter operation is described. Improved device design and fabrication techniques are required for further improvement in device performance.

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IWIPP 2000. International Workshop on Integrated Power Packaging (Cat. No.00EX426)

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