A Unified Approach for Modeling Multiterminal Bipolar and MOS Devices in Smart-Power Technologies

In this work we introduce compact models for both MOS and bipolar transistors used in an advanced smart power technology Deriving the topology of the model on the basis of physical structure and layout geometries we guarantee both physical meaning to model parameters an easy parameters extraction procedure and a similar model structure for parasitic components The models correctly pre dict in uence of parasitic couplings between each component and the collector of the power device showing good agreement with experi mental data