Yen-Wei Chang, Ming-Che Yu, Hsien-Jia Lin, Chun-Hsing Li
{"title":"采用系统级封装集成的紧凑型低成本五波段射频能量采集器","authors":"Yen-Wei Chang, Ming-Che Yu, Hsien-Jia Lin, Chun-Hsing Li","doi":"10.1109/RWS.2018.8305011","DOIUrl":null,"url":null,"abstract":"A compact five-band radio-frequency (RF) energy harvester (EH) using a system-in-package technique to take advantages of different technologies is proposed in this work. The RF EH is composed of five matching networks realized on a low-loss integrated-passive-devices (IPD) carrier and five rectifiers on a 0.18-μm CMOS chip. The CMOS chip is flipped and bonded to the IPD carrier through low-loss interconnects so that each on-chip rectifier can be integrated with an on-carrier matching network to support one of five band operations. High-g IPD passive components are employed to realize the matching networks. This not only provides a compact and low-cost solution, but the matching network can also give a high voltage gain to enhance the EH dc-to-RF conversion efficiency η. Native devices with a low threshold voltage provided by the 0.18-μm CMOS technology are chosen to improve the rectifier sensitivity. The proposed RF EH can give measured output voltages of 1.75, 1.77, 1.23, 1.19, and 1.26 V with n of 15.4, 15.7, 7.6, 7.1, and 8.0% at 0.74, 0.89, 1.8, 2.12, and 2.36 GHz, respectively, as the input RF power is −14 dBm and the load resistance is 500 kΩ. The proposed RF EH only occupies a 16.56 mm2 area.","PeriodicalId":170594,"journal":{"name":"2018 IEEE Radio and Wireless Symposium (RWS)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Compact low-cost five-band RF energy harvester using system-in-package integration\",\"authors\":\"Yen-Wei Chang, Ming-Che Yu, Hsien-Jia Lin, Chun-Hsing Li\",\"doi\":\"10.1109/RWS.2018.8305011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A compact five-band radio-frequency (RF) energy harvester (EH) using a system-in-package technique to take advantages of different technologies is proposed in this work. The RF EH is composed of five matching networks realized on a low-loss integrated-passive-devices (IPD) carrier and five rectifiers on a 0.18-μm CMOS chip. The CMOS chip is flipped and bonded to the IPD carrier through low-loss interconnects so that each on-chip rectifier can be integrated with an on-carrier matching network to support one of five band operations. High-g IPD passive components are employed to realize the matching networks. This not only provides a compact and low-cost solution, but the matching network can also give a high voltage gain to enhance the EH dc-to-RF conversion efficiency η. Native devices with a low threshold voltage provided by the 0.18-μm CMOS technology are chosen to improve the rectifier sensitivity. The proposed RF EH can give measured output voltages of 1.75, 1.77, 1.23, 1.19, and 1.26 V with n of 15.4, 15.7, 7.6, 7.1, and 8.0% at 0.74, 0.89, 1.8, 2.12, and 2.36 GHz, respectively, as the input RF power is −14 dBm and the load resistance is 500 kΩ. The proposed RF EH only occupies a 16.56 mm2 area.\",\"PeriodicalId\":170594,\"journal\":{\"name\":\"2018 IEEE Radio and Wireless Symposium (RWS)\",\"volume\":\"98 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE Radio and Wireless Symposium (RWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2018.8305011\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2018.8305011","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Compact low-cost five-band RF energy harvester using system-in-package integration
A compact five-band radio-frequency (RF) energy harvester (EH) using a system-in-package technique to take advantages of different technologies is proposed in this work. The RF EH is composed of five matching networks realized on a low-loss integrated-passive-devices (IPD) carrier and five rectifiers on a 0.18-μm CMOS chip. The CMOS chip is flipped and bonded to the IPD carrier through low-loss interconnects so that each on-chip rectifier can be integrated with an on-carrier matching network to support one of five band operations. High-g IPD passive components are employed to realize the matching networks. This not only provides a compact and low-cost solution, but the matching network can also give a high voltage gain to enhance the EH dc-to-RF conversion efficiency η. Native devices with a low threshold voltage provided by the 0.18-μm CMOS technology are chosen to improve the rectifier sensitivity. The proposed RF EH can give measured output voltages of 1.75, 1.77, 1.23, 1.19, and 1.26 V with n of 15.4, 15.7, 7.6, 7.1, and 8.0% at 0.74, 0.89, 1.8, 2.12, and 2.36 GHz, respectively, as the input RF power is −14 dBm and the load resistance is 500 kΩ. The proposed RF EH only occupies a 16.56 mm2 area.