基于拉格朗日SOR迭代的多阈值电压网络睡眠晶体管尺寸研究

Yici Cai, Qiang Zhou, Le Kang, Xianlong Hong
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引用次数: 3

摘要

多阈值电压CMOS (MTCMOS)技术对于降低泄漏功率是非常有效的。以前,为了降低功耗,将休眠晶体管连接在虚拟地线上,并提出了一种分布式休眠晶体管网络(DSTN)来降低瞬时电流。本文研究了如何找到DSTN结构中休眠晶体管尺寸问题的近最优解。本文采用优化领域中常用的拉格朗日逐次过松弛(SOR)迭代方法。该方法在每次迭代的调整过程中保证拉格朗日乘子满足极值条件,从而找到问题的近最优解。与非线性规划相比,我们的实验结果是非常令人兴奋的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Sleep transistor sizing for multi-threshold-voltage network using Lagrange SOR iteration
The multi-threshold-voltage CMOS (MTCMOS) technique is very effective for reducing leakage power. Previously, sleep transistors were connected the virtual ground lines to reduce the power consumption, and a distributed sleep transistor network (DSTN) was proposed to reduce the instantaneous current. This paper presents a research on how to find the near optimal solution for the sleep transistor sizing problem in the DSTN structure. This paper adopts Lagrange successive over-relaxation (SOR) iterative method which is frequently used in the optimization field. The method makes sure the Lagrange multiplier satisfying the extreme conditions during the adjustment in each iteration, in order to find the near-optimum of the problem. Our experimental results are very exciting compared with the nonlinear programming.
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