{"title":"用共振隧道δ - σ调制传感器进行应变检测的实验演示","authors":"Takumi Tajika, Y. Kakutani, M. Mori, K. Maezawa","doi":"10.1002/pssa.201600548","DOIUrl":null,"url":null,"abstract":"A strain sensor was fabricated based on a resonant tunneling diode (RTD) oscillator. This sensor uses strain dependent frequency change of the RTD oscillator, and the frequency delta-sigma modulation (frequency DSM, or FDSM) technique, which can convert a frequency to a digital signal with wide dynamic range and wide bandwidth. The sensor consists of an oscillator using an LC resonator and an RTD loaded on a beam of the cantilever. The cantilever was fabricated using selective wet etching of the InP substrate. In this sensor, the strain applied to the cantilever changes the current-voltage characteristics of the RTD due to the piezoelectric effect, and hence it changes the oscillation frequency. In this paper, it is demonstrated that the acoustic strain signal can be successfully detected by this sensor with noise shaping behavior, which is a unique nature of the DSM.","PeriodicalId":357009,"journal":{"name":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Experimental demonstration of strain detection using resonant tunneling delta-sigma modulation sensors\",\"authors\":\"Takumi Tajika, Y. Kakutani, M. Mori, K. Maezawa\",\"doi\":\"10.1002/pssa.201600548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A strain sensor was fabricated based on a resonant tunneling diode (RTD) oscillator. This sensor uses strain dependent frequency change of the RTD oscillator, and the frequency delta-sigma modulation (frequency DSM, or FDSM) technique, which can convert a frequency to a digital signal with wide dynamic range and wide bandwidth. The sensor consists of an oscillator using an LC resonator and an RTD loaded on a beam of the cantilever. The cantilever was fabricated using selective wet etching of the InP substrate. In this sensor, the strain applied to the cantilever changes the current-voltage characteristics of the RTD due to the piezoelectric effect, and hence it changes the oscillation frequency. In this paper, it is demonstrated that the acoustic strain signal can be successfully detected by this sensor with noise shaping behavior, which is a unique nature of the DSM.\",\"PeriodicalId\":357009,\"journal\":{\"name\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1002/pssa.201600548\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/pssa.201600548","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Experimental demonstration of strain detection using resonant tunneling delta-sigma modulation sensors
A strain sensor was fabricated based on a resonant tunneling diode (RTD) oscillator. This sensor uses strain dependent frequency change of the RTD oscillator, and the frequency delta-sigma modulation (frequency DSM, or FDSM) technique, which can convert a frequency to a digital signal with wide dynamic range and wide bandwidth. The sensor consists of an oscillator using an LC resonator and an RTD loaded on a beam of the cantilever. The cantilever was fabricated using selective wet etching of the InP substrate. In this sensor, the strain applied to the cantilever changes the current-voltage characteristics of the RTD due to the piezoelectric effect, and hence it changes the oscillation frequency. In this paper, it is demonstrated that the acoustic strain signal can be successfully detected by this sensor with noise shaping behavior, which is a unique nature of the DSM.