微波功率传输系统中高效整流器用高击穿电压GaAs肖特基二极管

2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2015-08-01 DOI:10.1109/RFIT.2015.7377933

Toshiyuki Tanaka, Marika Nakamura, Y. Yamaguchi, M. Tsuru, Yasuki Aihara, Atsushi Yamamoto, Y. Homma, E. Taniguchi

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引用次数: 5

摘要

微波无线电力传输系统在输入功率如1w时需要一个高RF-DC转换效率的整流器。为满足这一要求，研制了高击穿电压整流装置。本文介绍了一种自制的高击穿电压GaAs肖特基势垒二极管(SBD)作为整流器件。制备的低掺杂浓度2.6×1016 cm-3的GaAs SBD在不使用谐波调谐技术的情况下，在输入功率为27 dBm时击穿电压为23.5 V，转换效率为77.2%，与仿真结果一致。当采用谐波调谐技术时，仿真结果表明，在输入功率为27 dBm时，采用自制的GaAs SBD的5.8 ghz频段单路整流器的转换效率达到81.7%。据我们所知，这种转换效率在输入功率约1w和c波段时表现最佳。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High breakdown voltage GaAs schottky diode for a high efficiency rectifier in microwave power transmission systems

Microwave wireless power transmission systems require a high RF-DC conversion efficiency rectifier at input power such as 1 W. To meet this requirement, a rectifying device with high breakdown voltage is developed. This paper describes a fabricated high breakdown voltage GaAs Schottky Barrier Diode (SBD) as the rectifying device. The fabricated GaAs SBD at low doping concentration of 2.6×1016 cm-3 achieves breakdown voltage of 23.5 V and the conversion efficiency of 77.2% at input power of 27 dBm under condition without harmonic tuning technique which is agreed with simulation result. When harmonic tuning technique is adopted, a 5.8 GHz-band singleshunt rectifier with the fabricated GaAs SBD achieves the conversion efficiency of 81.7% at input power of 27 dBm in simulation. This conversion efficiency is the best performance at around 1 W input power and C-band to our knowledge.

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2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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