自旋轨道相互作用下抛物量子点磁性能的理论研究

P.Vallabh Sharma, V. Verma, L. K. Mishra
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摘要

[J] .北京大学学报(自然科学版)。理论物理。[j] .中国农业科学,2003,19(5):391 - 391。达成。物理学报,59,1 (2000)[j]。[j],我们从理论上计算了自旋轨道相互作用下抛物量子点的磁化率和磁化率。我们观察到以下事实:我们的理论分析表明,磁化率和磁化率在低温下表现出相当有趣的性质。人们观察到在低磁场下磁化率和磁化率的突变。这种类型的物理行为是由于能量谱中自旋分裂电子能级之间的交替能级交叉。这主要是由于自旋轨道相互作用。我们的计算还表明,如果使用InAs半导体量子点的参数,则可以观察到点的par磁性增强。这种效应可以通过外电场效应或网点设计来控制。本文的理论分析也揭示了利用抛物型量子点可以很好地研究磁性能的事实。它是抛物线(柱面坐标((,)),它展示了点中载流子的动力学。因此,本文的工作将对抛物型量子点的仪器设计有很大的帮助。Pinku Sharma,等。&印第安纳大学物理学。Vol.8 (10), 134-144 (2018) 135
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Theoretical Study of Magnetic Properties of Parabolic Quantum Dots in the Presence of Spin-orbit Interaction
Using the theoretical formalism of O. Voskoboynikov et al.[J Appl. Phys., 94, 5891 (2003)],[J. Appl. Phys. 59, 1 (2000)] and [Phys. Rev. B63, 165306 (2001)], we have theoretically evaluated magnetization and magnetic susceptibility of parabolic quantum dots in the presence of spin orbit interaction. We observe the following facts: Our theoretical analysis indicate that magnetization and magnetic susceptibility show quite interesting properties at low temperature. One observes abrupt change of the magnetization and susceptibility at low magnetic fields. This type of physical behavior is due to the alternative level crossing between spin-split electron levels in the energy spectrum. This is essentially due to spin-orbit interaction. Our calculation also demonstrate that if one uses the parameter of InAs semiconductor quantum dots then one observes the enhancement of the par magnetism of the dots. This effect can be controlled by the effect of external electric fields or the dot design. The theoretical analysis of the paper also reveals the fact that magnetic properties are elegantly can be studied with the help of parabolic QDs. It is the parabolic (cylindrical coordinate ( ( , )   ) which demonstrates the dynamics of the charge carriers in the dots. In this way, the work reported in this paper will be quite helpful in the area of instrument design using parabolic QDs. Pinku Sharma, et al., J. Pure Appl. & Ind. Phys. Vol.8 (10), 134-144 (2018) 135
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