L. Boman, A. Bubenzer, J. Meot, J. Schmitt, J. Siéfert
{"title":"a-Si光伏组件大面积沉积","authors":"L. Boman, A. Bubenzer, J. Meot, J. Schmitt, J. Siéfert","doi":"10.1109/PVSC.1990.111893","DOIUrl":null,"url":null,"abstract":"Large-area deposition scaling-up (from 30*30 to 50*60 and 60*100 m/sup 2/) is reported within the context of PV (photovoltaic) industrial development. Production-oriented deposition machine specifications are described, and the various technical solutions are discussed. The selected solutions such as plasma box and plasma etching were investigated in full-scale experiments, and illustrative results are presented. An NF/sub 3/ etching process was developed and optimized in order to match the maintenance requirements of the production machines. Thanks to this cleaning process, a very low point defect density is demonstrated (>1/ft/sup 2/). The thickness uniformity is shown to be better than +or-5%. Material quality is also uniform, which is demonstrated by a mapping of the microcrystalline transition. The plasma box concept is shown to reach very low impurity contamination levels in a classical vacuum machine, comparable to what is obtained in ultrahigh-vacuum technology.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"114 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Large area deposition of a-Si PV modules\",\"authors\":\"L. Boman, A. Bubenzer, J. Meot, J. Schmitt, J. Siéfert\",\"doi\":\"10.1109/PVSC.1990.111893\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Large-area deposition scaling-up (from 30*30 to 50*60 and 60*100 m/sup 2/) is reported within the context of PV (photovoltaic) industrial development. Production-oriented deposition machine specifications are described, and the various technical solutions are discussed. The selected solutions such as plasma box and plasma etching were investigated in full-scale experiments, and illustrative results are presented. An NF/sub 3/ etching process was developed and optimized in order to match the maintenance requirements of the production machines. Thanks to this cleaning process, a very low point defect density is demonstrated (>1/ft/sup 2/). The thickness uniformity is shown to be better than +or-5%. Material quality is also uniform, which is demonstrated by a mapping of the microcrystalline transition. The plasma box concept is shown to reach very low impurity contamination levels in a classical vacuum machine, comparable to what is obtained in ultrahigh-vacuum technology.<<ETX>>\",\"PeriodicalId\":211778,\"journal\":{\"name\":\"IEEE Conference on Photovoltaic Specialists\",\"volume\":\"114 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-05-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Conference on Photovoltaic Specialists\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1990.111893\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Conference on Photovoltaic Specialists","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1990.111893","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Large-area deposition scaling-up (from 30*30 to 50*60 and 60*100 m/sup 2/) is reported within the context of PV (photovoltaic) industrial development. Production-oriented deposition machine specifications are described, and the various technical solutions are discussed. The selected solutions such as plasma box and plasma etching were investigated in full-scale experiments, and illustrative results are presented. An NF/sub 3/ etching process was developed and optimized in order to match the maintenance requirements of the production machines. Thanks to this cleaning process, a very low point defect density is demonstrated (>1/ft/sup 2/). The thickness uniformity is shown to be better than +or-5%. Material quality is also uniform, which is demonstrated by a mapping of the microcrystalline transition. The plasma box concept is shown to reach very low impurity contamination levels in a classical vacuum machine, comparable to what is obtained in ultrahigh-vacuum technology.<>