{"title":"用于WDM网络的多信道MSM-HEMT接收机oeic","authors":"W. Hong, G. Chang, R. Bhat, J. Hayes","doi":"10.1109/ICIPRM.1993.380657","DOIUrl":null,"url":null,"abstract":"The authors have demonstrated a monolithically integrated multichannel receiver optoelectronic integrated circuit (OEIC) for wavelength-division-multiplexing (WDM) applications. The OEIC is based on a InAlAs/InGaAs metal-semiconductor-metal (MSM) detector and high-electron-mobility-transistor (HEMT) device technologies. The response characteristics of the OEIC were measured by sweeping all four channels using a 1.3 /spl mu/m laser diode of known frequency response. A uniform frequency response was measured with each channel having a -3 dB bandwidth of 1.3 GHz. The sensitivity was -25.2 dBm at 1.2 Gb/s for a bit-error-rate of 10/sup -9/. The high sensitivity and high-speed operation is attributed to the low-capacitance MSM detector and the high-performance HEMT devices.<<ETX>>","PeriodicalId":186256,"journal":{"name":"1993 (5th) International Conference on Indium Phosphide and Related Materials","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-04-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Multichannel MSM-HEMT receiver OEICs for WDM networks\",\"authors\":\"W. Hong, G. Chang, R. Bhat, J. Hayes\",\"doi\":\"10.1109/ICIPRM.1993.380657\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The authors have demonstrated a monolithically integrated multichannel receiver optoelectronic integrated circuit (OEIC) for wavelength-division-multiplexing (WDM) applications. The OEIC is based on a InAlAs/InGaAs metal-semiconductor-metal (MSM) detector and high-electron-mobility-transistor (HEMT) device technologies. The response characteristics of the OEIC were measured by sweeping all four channels using a 1.3 /spl mu/m laser diode of known frequency response. A uniform frequency response was measured with each channel having a -3 dB bandwidth of 1.3 GHz. The sensitivity was -25.2 dBm at 1.2 Gb/s for a bit-error-rate of 10/sup -9/. The high sensitivity and high-speed operation is attributed to the low-capacitance MSM detector and the high-performance HEMT devices.<<ETX>>\",\"PeriodicalId\":186256,\"journal\":{\"name\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-04-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1993 (5th) International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1993.380657\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1993 (5th) International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1993.380657","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Multichannel MSM-HEMT receiver OEICs for WDM networks
The authors have demonstrated a monolithically integrated multichannel receiver optoelectronic integrated circuit (OEIC) for wavelength-division-multiplexing (WDM) applications. The OEIC is based on a InAlAs/InGaAs metal-semiconductor-metal (MSM) detector and high-electron-mobility-transistor (HEMT) device technologies. The response characteristics of the OEIC were measured by sweeping all four channels using a 1.3 /spl mu/m laser diode of known frequency response. A uniform frequency response was measured with each channel having a -3 dB bandwidth of 1.3 GHz. The sensitivity was -25.2 dBm at 1.2 Gb/s for a bit-error-rate of 10/sup -9/. The high sensitivity and high-speed operation is attributed to the low-capacitance MSM detector and the high-performance HEMT devices.<>
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