M. S. Karpovich, Vasily D. Lys, K. E. Blum, V. Vasilyev
{"title":"功率变换器多功能控制集成电路中250nm BCD技术的静电放电保护","authors":"M. S. Karpovich, Vasily D. Lys, K. E. Blum, V. Vasilyev","doi":"10.1109/EDM.2016.7538776","DOIUrl":null,"url":null,"abstract":"This work is devoted to the designing and development of Electrostatic Discharge (ESD) Protection elements for Integrated Circuits in 250 nm BCD (Bipolar, CMOS, DMOS) mixed technology. ESD protection solution has been developed for Multi-Functional Control ICs dedicated to the implementation in AC/DC and DC/DC Power Supply Units. This solution assumes using of different voltage domains and based on current diversion with the use of different protective elements (CLAMP). According to the simulation performed, ESD protection solution shows 2000 V protection in MFC IC developed according to above mentioned IC technology.","PeriodicalId":353623,"journal":{"name":"2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","volume":"588 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Electrostatic discharge protection in 250 nm BCD technology for multi-functional control integrated circuits for power converters\",\"authors\":\"M. S. Karpovich, Vasily D. Lys, K. E. Blum, V. Vasilyev\",\"doi\":\"10.1109/EDM.2016.7538776\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work is devoted to the designing and development of Electrostatic Discharge (ESD) Protection elements for Integrated Circuits in 250 nm BCD (Bipolar, CMOS, DMOS) mixed technology. ESD protection solution has been developed for Multi-Functional Control ICs dedicated to the implementation in AC/DC and DC/DC Power Supply Units. This solution assumes using of different voltage domains and based on current diversion with the use of different protective elements (CLAMP). According to the simulation performed, ESD protection solution shows 2000 V protection in MFC IC developed according to above mentioned IC technology.\",\"PeriodicalId\":353623,\"journal\":{\"name\":\"2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)\",\"volume\":\"588 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2016.7538776\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 17th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2016.7538776","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Electrostatic discharge protection in 250 nm BCD technology for multi-functional control integrated circuits for power converters
This work is devoted to the designing and development of Electrostatic Discharge (ESD) Protection elements for Integrated Circuits in 250 nm BCD (Bipolar, CMOS, DMOS) mixed technology. ESD protection solution has been developed for Multi-Functional Control ICs dedicated to the implementation in AC/DC and DC/DC Power Supply Units. This solution assumes using of different voltage domains and based on current diversion with the use of different protective elements (CLAMP). According to the simulation performed, ESD protection solution shows 2000 V protection in MFC IC developed according to above mentioned IC technology.