声子辅助弹道CHE注射的分栅细胞

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852796

T. Saito, S. Ogura, T. Ogura, T. Yuda, Y. Kawazu, M. Ikegami, A. Uchiyama, T. Ono

{"title":"声子辅助弹道CHE注射的分栅细胞","authors":"T. Saito, S. Ogura, T. Ogura, T. Yuda, Y. Kawazu, M. Ikegami, A. Uchiyama, T. Ono","doi":"10.1109/VLSIT.2000.852796","DOIUrl":null,"url":null,"abstract":"A planar channel split floating gate memory cell with an ultra short channel of <40 nm (within 3-4/spl times/ of the electron mean free path) is presented, in which high energy channel hot electrons generated by ballistic channel transport can be injected by phonon scattering with slight energy loss. This planar channel device can match the <1 /spl mu/s program speed of the previously reported step channel ballistic device at the same low voltages of Vd=5 V, Vcg=5 V. The structural differences between a planar and step channel are evaluated.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Split gate cell with phonon assisted ballistic CHE injection\",\"authors\":\"T. Saito, S. Ogura, T. Ogura, T. Yuda, Y. Kawazu, M. Ikegami, A. Uchiyama, T. Ono\",\"doi\":\"10.1109/VLSIT.2000.852796\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A planar channel split floating gate memory cell with an ultra short channel of <40 nm (within 3-4/spl times/ of the electron mean free path) is presented, in which high energy channel hot electrons generated by ballistic channel transport can be injected by phonon scattering with slight energy loss. This planar channel device can match the <1 /spl mu/s program speed of the previously reported step channel ballistic device at the same low voltages of Vd=5 V, Vcg=5 V. The structural differences between a planar and step channel are evaluated.\",\"PeriodicalId\":268624,\"journal\":{\"name\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"volume\":\"32 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2000.852796\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852796","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

提出了一种超短通道小于40 nm(在电子平均自由程的3-4/spl倍/内)的平面通道分裂浮栅存储电池，该电池可以通过声子散射注入由弹道通道输运产生的高能通道热电子，且能量损失很小。在相同的低电压Vd=5 V, Vcg=5 V下，该平面通道器件可以达到先前报道的阶跃通道弹道器件<1 /spl mu/s的程序速度。分析了平面通道和阶跃通道的结构差异。

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Split gate cell with phonon assisted ballistic CHE injection

A planar channel split floating gate memory cell with an ultra short channel of <40 nm (within 3-4/spl times/ of the electron mean free path) is presented, in which high energy channel hot electrons generated by ballistic channel transport can be injected by phonon scattering with slight energy loss. This planar channel device can match the <1 /spl mu/s program speed of the previously reported step channel ballistic device at the same low voltages of Vd=5 V, Vcg=5 V. The structural differences between a planar and step channel are evaluated.

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来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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