用于TFT的溅射Si薄膜的氩激光退火

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496335

Sun Zhen, K. Tong, H. Cho, Y. Wong, L. Tsang, P. W. Chan

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引用次数: 2

摘要

研究结果表明，连续波Ar/sup +/激光辐照结晶的射频溅射Si薄膜是制备多晶硅tft的理想材料。在p型样品中，在适当的退火条件下，多晶Si薄膜的霍尔迁移率高达120 cm/sup 2//V-s。暗电导率对温度的依赖性表明，尽管晶粒尺寸仅为30 nm，但激光退火Si薄膜中的陷阱密度大大降低是高迁移率的原因。

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Ar laser annealing of sputtered Si films for TFT applications

We have shown that r.f. sputtered Si films crystallized by cw Ar/sup +/ laser irradiation is a suitable material for fabrication of polysilicon TFTs. Polycrystalline Si film with proper annealing condition has a high Hall mobility up to 120 cm/sup 2//V-s in p-type samples. The dependence of dark conductivity on temperature suggests that much reduced trap density in laser-annealed Si films is the reason for the high mobility, despite the fact that the grain size is only 30 nm.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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