As/sub - 2/Se/sub - 3/和As/sub - 2/Se/sub - 3/Bi/sub - x/玻璃系介电性能的比较研究

Proceedings. 11th International Symposium on Electrets Pub Date : 2002-12-10 DOI:10.1109/ISE.2002.1042964

G. Bordovsky, V.A. Bordovsky, R. Castro

{"title":"As/sub - 2/Se/sub - 3/和As/sub - 2/Se/sub - 3/Bi/sub - x/玻璃系介电性能的比较研究","authors":"G. Bordovsky, V.A. Bordovsky, R. Castro","doi":"10.1109/ISE.2002.1042964","DOIUrl":null,"url":null,"abstract":"We report about the peculiarities of the dielectric properties of a-As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/Bi/sub x/ (x=20 at.%) layers. The As/sub 2/Se/sub 3/ layers are characterized by gradual decrease of /spl epsiv/ with frequency and increase with temperature. A broad maximum is registered on tg/spl delta/-f dependence. At low frequencies f<10/sup -1/ Hz the loss factor increases with temperature. For modified system As/sub 2/Se/sub 3/Bi/sub x/ much greater decrease of /spl epsi/ with frequency and increase with temperature is found. tg/spl delta/-f dependence of this system demonstrates no maximum and at frequencies f<10/sup -1/ Hz the loss factor decreases with temperature. The mentioned above results confirm the assumption that the metal dopants act as positively charge impurities.","PeriodicalId":331115,"journal":{"name":"Proceedings. 11th International Symposium on Electrets","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comparative study of dielectric properties of As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/Bi/sub x/ glassy systems\",\"authors\":\"G. Bordovsky, V.A. Bordovsky, R. Castro\",\"doi\":\"10.1109/ISE.2002.1042964\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report about the peculiarities of the dielectric properties of a-As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/Bi/sub x/ (x=20 at.%) layers. The As/sub 2/Se/sub 3/ layers are characterized by gradual decrease of /spl epsiv/ with frequency and increase with temperature. A broad maximum is registered on tg/spl delta/-f dependence. At low frequencies f<10/sup -1/ Hz the loss factor increases with temperature. For modified system As/sub 2/Se/sub 3/Bi/sub x/ much greater decrease of /spl epsi/ with frequency and increase with temperature is found. tg/spl delta/-f dependence of this system demonstrates no maximum and at frequencies f<10/sup -1/ Hz the loss factor decreases with temperature. The mentioned above results confirm the assumption that the metal dopants act as positively charge impurities.\",\"PeriodicalId\":331115,\"journal\":{\"name\":\"Proceedings. 11th International Symposium on Electrets\",\"volume\":\"104 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings. 11th International Symposium on Electrets\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISE.2002.1042964\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. 11th International Symposium on Electrets","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISE.2002.1042964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们报道了a-As/sub 2/Se/sub 3/和As/sub 2/Se/sub 3/Bi/sub x/ (x= 20at .%)层介电特性的特殊性。As/sub 2/Se/sub 3/层的epsiv/随频率的增加而逐渐减小，随温度的升高而增大。在tg/spl δ /-f依赖性上注册了一个广泛的最大值。在低频f<10/sup -1/ Hz时，损耗因子随温度升高而增加。对于改进后的As/sub 2/Se/sub 3/Bi/sub x/体系，其/spl epsi/随频率降低，随温度升高。该系统的δ /-f依赖性没有最大值，在频率f<10/sup -1/ Hz时，损耗因子随温度降低。上述结果证实了金属掺杂剂作为正电荷杂质的假设。

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A comparative study of dielectric properties of As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/Bi/sub x/ glassy systems

We report about the peculiarities of the dielectric properties of a-As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/Bi/sub x/ (x=20 at.%) layers. The As/sub 2/Se/sub 3/ layers are characterized by gradual decrease of /spl epsiv/ with frequency and increase with temperature. A broad maximum is registered on tg/spl delta/-f dependence. At low frequencies f<10/sup -1/ Hz the loss factor increases with temperature. For modified system As/sub 2/Se/sub 3/Bi/sub x/ much greater decrease of /spl epsi/ with frequency and increase with temperature is found. tg/spl delta/-f dependence of this system demonstrates no maximum and at frequencies f<10/sup -1/ Hz the loss factor decreases with temperature. The mentioned above results confirm the assumption that the metal dopants act as positively charge impurities.

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Proceedings. 11th International Symposium on Electrets

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