{"title":"基于gan的相控阵雷达发射链优化的x波段GaAs相位驱动MMIC","authors":"M. van Heijningen, J. Essing, F. V. van Vliet","doi":"10.23919/EUMIC.2018.8539936","DOIUrl":null,"url":null,"abstract":"In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X-band GaN HP A. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a low-cost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5°.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"X-Band GaAs Phase Driver MMIC Optimized for GaN-Based Phased-Array Radar Transmit Chain\",\"authors\":\"M. van Heijningen, J. Essing, F. V. van Vliet\",\"doi\":\"10.23919/EUMIC.2018.8539936\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X-band GaN HP A. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a low-cost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5°.\",\"PeriodicalId\":248339,\"journal\":{\"name\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 13th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2018.8539936\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2018.8539936","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
在大功率相控阵雷达的发射链中越来越多地使用氮化镓(GaN)大功率放大器,而在接收链中则有向集成硅(Si)基器件发展的趋势。氮化镓放大器通常需要一个相对较高的输入功率,使得它有必要包括一个中等功率的驱动放大器。对于相控阵操作,在发射链中也需要一个移相器。本文介绍了一种集成移相驱动器MMIC的设计和测量结果,该MMIC经过优化,可直接驱动x波段GaN HP a。这种砷化镓(GaAs) MMIC被设计成适合低成本的塑料QFN封装,以降低前端模块组装的成本。所实现的qfn封装MMIC具有6位数字移相器,源功率为5 dBm,连续波输出功率超过22 dBm,范围为8至11 GHz。在此带宽范围内,测量的均方根相位误差小于5°。
In the transmit chain of high-power phased-array radars more and more use is made of Gallium-Nitride (GaN) high-power amplifiers (HPAs), while in the receive chain there is a trend to move to integrated silicon (Si) based components. The GaN amplifiers usually require a relatively high input power, making it necessary to include a medium power driver amplifier. For phased-array operation also a phase shifter in the transmit chain is required. In this paper the design and measurement results of an integrated phase-shifter-driver MMIC are presented, which has been optimized to directly drive an X-band GaN HP A. This Gallium-Arsenide (GaAs) MMIC has been designed to fit in a low-cost plastic QFN package to reduce the cost of the front-end module assembly. The realized QFN-packaged MMIC features a 6-bit digital phase shifter and a CW output power of more than 22 dBm at a source power of 5 dBm, from 8 to 11 GHz. Over this bandwidth the measured RMS phase error is less than 5°.