在CNFET电路中产生近似电路以减少过程诱导退化的方法

K. Sheikh, Lan Wei
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引用次数: 0

摘要

在CNFET等新兴技术中,提出了一种系统的方法来生成具有较少节点和较短路径的近似电路,以减少由于过程不完善而引起的过程退化。在一个16位CNFET加法器的例子中,当PCNTopen =5%时,两个近似加法器分别达到80.5%和90.2%的电路级通过率,相对逻辑误差分别为3.3%和24.0%,而精密加法器的通过率为12.5%。该研究为实际利用这种技术进行容错应用铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Methodology to Generate Approximate Circuits to Reduce Process Induced Degradation in CNFET Based Circuits
A systematic methodology is presented to generate approximate circuits with fewer nodes and shorter paths to reduce process induced degradation due to imperfect process in emerging technologies such as CNFET. In a 16-bit CNFET adder example, at PCNTopen =5%, two resulted approximate adders achieve 80.5% and 90.2% circuit-level pass rate with a penalty of 3.3% and 24.0% in relative logic error, respectively, in comparison with 12.5% pass rate for the precision counterpart. The study paves the path to practically utilize such technology for error-resilient applications.
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