平面NAND闪存中Ru基混合浮栅的优化设计

2015 IEEE International Memory Workshop (IMW) Pub Date : 2015-05-17 DOI:10.1109/IMW.2015.7150298

L. Breuil, J. Lisoni, P. Blomme, G. Van den bosch, J. van Houdt

{"title":"平面NAND闪存中Ru基混合浮栅的优化设计","authors":"L. Breuil, J. Lisoni, P. Blomme, G. Van den bosch, J. van Houdt","doi":"10.1109/IMW.2015.7150298","DOIUrl":null,"url":null,"abstract":"The required transition from Control Gate wrap-around to planar structure for NAND flash scaling below 20nm node causes important loss of coupling factor. In order to recover the Programming window, we develop a Hybrid Floating Gate using Ru as high work-function metal. With a proper nitridation of the underlying Si and ALD technique, we obtain a continuous Ru layer as thin as 2nm that is thermally stable in contact with Si. Thanks to the higher work function of Ru, a programming window of more than 10V has been be achieved.","PeriodicalId":107437,"journal":{"name":"2015 IEEE International Memory Workshop (IMW)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Optimization of Ru Based Hybrid Floating Gate for Planar NAND Flash\",\"authors\":\"L. Breuil, J. Lisoni, P. Blomme, G. Van den bosch, J. van Houdt\",\"doi\":\"10.1109/IMW.2015.7150298\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The required transition from Control Gate wrap-around to planar structure for NAND flash scaling below 20nm node causes important loss of coupling factor. In order to recover the Programming window, we develop a Hybrid Floating Gate using Ru as high work-function metal. With a proper nitridation of the underlying Si and ALD technique, we obtain a continuous Ru layer as thin as 2nm that is thermally stable in contact with Si. Thanks to the higher work function of Ru, a programming window of more than 10V has been be achieved.\",\"PeriodicalId\":107437,\"journal\":{\"name\":\"2015 IEEE International Memory Workshop (IMW)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Memory Workshop (IMW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2015.7150298\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2015.7150298","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

对于20nm以下节点的NAND闪存缩放，从控制门环绕到平面结构的过渡导致了重要的耦合因子损失。为了恢复编程窗口，我们开发了一种以Ru为高工作功能金属的混合浮栅。通过适当的氮化和ALD技术，我们获得了薄至2nm的连续Ru层，该层与Si接触时热稳定。由于Ru的功函数更高，实现了10V以上的编程窗口。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Optimization of Ru Based Hybrid Floating Gate for Planar NAND Flash

The required transition from Control Gate wrap-around to planar structure for NAND flash scaling below 20nm node causes important loss of coupling factor. In order to recover the Programming window, we develop a Hybrid Floating Gate using Ru as high work-function metal. With a proper nitridation of the underlying Si and ALD technique, we obtain a continuous Ru layer as thin as 2nm that is thermally stable in contact with Si. Thanks to the higher work function of Ru, a programming window of more than 10V has been be achieved.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2015 IEEE International Memory Workshop (IMW)

自引率

0.00%

发文量