千兆级DRAM用CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN电容的研制

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852785

Wan-Don Kim, Jin Woon Kim, Seok-jun Won, S. Nam, B. Nam, C. Yoo, Y. Park, Sang In Lee, M. Lee

{"title":"千兆级DRAM用CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN电容的研制","authors":"Wan-Don Kim, Jin Woon Kim, Seok-jun Won, S. Nam, B. Nam, C. Yoo, Y. Park, Sang In Lee, M. Lee","doi":"10.1109/VLSIT.2000.852785","DOIUrl":null,"url":null,"abstract":"We have investigated the electrical properties of metal/Ta/sub 2/O/sub 5//metal (MIM-Ta/sub 2/O/sub 5/) capacitor for multigigabit-scale DRAMs. CVD-TiN film was used as a bottom electrode, whereas PVD-TiN, CVD-TiN and CVD-Ru metals were compared for a top electrode. Our results, including electrical properties and step coverage, showed that a CVD-Ru film is the most promising top electrode material. Based on this result, a CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor with cylinder-type storage node was developed, and the cell capacitance of 40fF/cell with the leakage current of 0.1fA/cell at /spl plusmn/1 V applied voltage was accomplished.","PeriodicalId":268624,"journal":{"name":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Development of CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor for multigigabit-scale DRAM generation\",\"authors\":\"Wan-Don Kim, Jin Woon Kim, Seok-jun Won, S. Nam, B. Nam, C. Yoo, Y. Park, Sang In Lee, M. Lee\",\"doi\":\"10.1109/VLSIT.2000.852785\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated the electrical properties of metal/Ta/sub 2/O/sub 5//metal (MIM-Ta/sub 2/O/sub 5/) capacitor for multigigabit-scale DRAMs. CVD-TiN film was used as a bottom electrode, whereas PVD-TiN, CVD-TiN and CVD-Ru metals were compared for a top electrode. Our results, including electrical properties and step coverage, showed that a CVD-Ru film is the most promising top electrode material. Based on this result, a CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor with cylinder-type storage node was developed, and the cell capacitance of 40fF/cell with the leakage current of 0.1fA/cell at /spl plusmn/1 V applied voltage was accomplished.\",\"PeriodicalId\":268624,\"journal\":{\"name\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.2000.852785\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2000.852785","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

研究了金属/Ta/sub 2/O/sub 5/ metal (MIM-Ta/sub 2/O/sub 5/)电容的电学性能。采用CVD-TiN薄膜作为下电极，比较了PVD-TiN、CVD-TiN和CVD-Ru金属作为上电极。我们的结果，包括电学性能和台阶覆盖，表明CVD-Ru薄膜是最有前途的顶电极材料。在此基础上，研制了一种圆柱形存储节点CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN电容，实现了在/spl + / 1v外加电压下，漏电流为0.1fA/cell，电池容量为40fF/cell。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Development of CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor for multigigabit-scale DRAM generation

We have investigated the electrical properties of metal/Ta/sub 2/O/sub 5//metal (MIM-Ta/sub 2/O/sub 5/) capacitor for multigigabit-scale DRAMs. CVD-TiN film was used as a bottom electrode, whereas PVD-TiN, CVD-TiN and CVD-Ru metals were compared for a top electrode. Our results, including electrical properties and step coverage, showed that a CVD-Ru film is the most promising top electrode material. Based on this result, a CVD-Ru/Ta/sub 2/O/sub 5//CVD-TiN capacitor with cylinder-type storage node was developed, and the cell capacitance of 40fF/cell with the leakage current of 0.1fA/cell at /spl plusmn/1 V applied voltage was accomplished.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

自引率

0.00%

发文量