介质材料HfO2对CSDG MOSFET表面电位的影响

2018 International Conference on Computer Communication and Informatics (ICCCI) Pub Date : 1900-01-01 DOI:10.1109/ICCCI.2018.8441369

Mandisi Shunqukela, V. Srivastava

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引用次数: 4

摘要

本文讨论了圆柱环绕双栅(CSDG) MOSFET的表面电势。这是在CSDG MOSFET的二维解析模型的基础上进行的。在开发潜在描述模型的过程中，采用了渐进通道分析方法。分析研究采用了氧化铪(HfO2)。HfO2是一种高介电材料，当与现有的二氧化硅(SiO2)界面时，有望最大限度地减少短通道效应(SCE)。因此，用SiO2和HfO2分析了复合氧化物的构型。已经观察到，结合氧化物材料的CSDG MOSFET适合最小化SCE，并可用于快速开关操作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dielectric Material (HfO2) Effect on Surface Potential for CSDG MOSFET

This work discusses about the surface potential for the Cylindrical Surrounding Double-Gate (CSDG) MOSFET. This has been done on the basis of analytical 2-D model of the CSDG MOSFET w.r.t. the surface potential. Gradual channel analysis approach has been used in the process of developing the potential descriptive model. The analytical study has been performed using the Hafnium Oxide (HfO2). The HfO2 is a high-dielectric material that is promising to minimise Short Channel Effects (SCE) when interfaced with the existing Silicon Dioxide (SiO2). Therefore combined oxide configurations has been analysed using SiO2 and HfO2. It has been observed that the CSDG MOSFET with combined oxide material is suitable to minimise the SCE and can be used for fast switching operations.

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2018 International Conference on Computer Communication and Informatics (ICCCI)

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