110GHz GaN肖特基二极管三频器的设计

2019 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT) Pub Date : 2019-08-01 DOI:10.1109/UCMMT47867.2019.9008344

Yiwei Wang, Zhen Zhou, Yi Hu, Yizheng He, Bo Zhang, Xiaoming Chen, Xingyu Chen, A. Lixin, Jicong Zhang, Yong Fan

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引用次数: 1

摘要

本文设计了一种110GHz GaN肖特基二极管三倍频器。GaN肖特基二极管和整个电路采用Rogers/RT5880，厚度为0.127m。利用HFSS和ADS软件对该三倍器进行了电路设计、仿真和优化，仿真结果表明，该三倍器在110GHz频率下效率可达到7%以上，输出功率可达到100mW。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of a 110GHz GaN Schottky Diode Frequency Tripler

In this paper, a 110GHz GaN Schottky diode frequency tripler is presented. The GaN Schottky diodes and the whole circuit are on Rogers/RT5880 and the thickness is 0.127m. The circuit design, simulation and optimization of the frequency tripler are carried out by using HFSS and ADS. The simulation result shows the efficiency of the tripler can achieve at least 7% in 110GHz and the outpower can achieve 100mW.

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2019 12th UK-Europe-China Workshop on Millimeter Waves and Terahertz Technologies (UCMMT)

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