{"title":"在沉积硅波导中使用四波混频的超低功耗160- 10gb /s光解复用","authors":"Ke-Yao Wang, K. Petrillo, M. Foster, A. Foster","doi":"10.1109/CISS.2013.6552303","DOIUrl":null,"url":null,"abstract":"Utilizing a 6-mm-long hydrogenated amorphous silicon nanowaveguide, we demonstrate error-free (BER <; 10-9) 160-to-10 Gb/s OTDM demultiplexing using ultralow switching peak powers of 50 mW. This material is deposited at low temperatures enabling a path toward multilayer integration and therefore massive scaling of the number of devices in a single photonic chip.","PeriodicalId":268095,"journal":{"name":"2013 47th Annual Conference on Information Sciences and Systems (CISS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Ultralow-power 160-to-10Gb/s optical demultiplexing using four-wave mixing in deposited silicon waveguides\",\"authors\":\"Ke-Yao Wang, K. Petrillo, M. Foster, A. Foster\",\"doi\":\"10.1109/CISS.2013.6552303\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Utilizing a 6-mm-long hydrogenated amorphous silicon nanowaveguide, we demonstrate error-free (BER <; 10-9) 160-to-10 Gb/s OTDM demultiplexing using ultralow switching peak powers of 50 mW. This material is deposited at low temperatures enabling a path toward multilayer integration and therefore massive scaling of the number of devices in a single photonic chip.\",\"PeriodicalId\":268095,\"journal\":{\"name\":\"2013 47th Annual Conference on Information Sciences and Systems (CISS)\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-03-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 47th Annual Conference on Information Sciences and Systems (CISS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CISS.2013.6552303\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 47th Annual Conference on Information Sciences and Systems (CISS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CISS.2013.6552303","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultralow-power 160-to-10Gb/s optical demultiplexing using four-wave mixing in deposited silicon waveguides
Utilizing a 6-mm-long hydrogenated amorphous silicon nanowaveguide, we demonstrate error-free (BER <; 10-9) 160-to-10 Gb/s OTDM demultiplexing using ultralow switching peak powers of 50 mW. This material is deposited at low temperatures enabling a path toward multilayer integration and therefore massive scaling of the number of devices in a single photonic chip.
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