I. Gyongy, N. Calder, A. Davies, N. Dutton, P. Dalgarno, R. Duncan, C. Rickman, R. Henderson
{"title":"256×256, 100kfps, 61%填充因子时间分辨SPAD图像传感器显微镜应用","authors":"I. Gyongy, N. Calder, A. Davies, N. Dutton, P. Dalgarno, R. Duncan, C. Rickman, R. Henderson","doi":"10.1109/IEDM.2016.7838373","DOIUrl":null,"url":null,"abstract":"A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of −160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.","PeriodicalId":186544,"journal":{"name":"2016 IEEE International Electron Devices Meeting (IEDM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"256×256, 100kfps, 61% Fill-factor time-resolved SPAD image sensor for microscopy applications\",\"authors\":\"I. Gyongy, N. Calder, A. Davies, N. Dutton, P. Dalgarno, R. Duncan, C. Rickman, R. Henderson\",\"doi\":\"10.1109/IEDM.2016.7838373\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of −160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.\",\"PeriodicalId\":186544,\"journal\":{\"name\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-12-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Electron Devices Meeting (IEDM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2016.7838373\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2016.7838373","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 256×256 Single Photon Avalanche Diode (SPAD) image sensor operating at 100kfps with fill factor of 61% and pixel pitch of 16μm is reported. An all-NMOS 7T pixel allows high uniformity gated operation down to 4ns and ∼600ps fall time with on-chip delay generation. The sensor operates with 0.996 temporal aperture ratio (TAR) in rolling shutter and has a parasitic light sensitivity (PLS) in excess of −160dB when operated in global shutter. Gating and cooling allow the suppression of dark noise, which, in combination with the high fill factor, enables competitive low-light performance with electron multiplying CCDs (EMCCDs) whilst offering time-resolved imaging modes.