{"title":"以pn控制结作为电流放大器的场效应晶体管上光电二极管和光接收器件的数学模型","authors":"N. Yunusov, R.K. Atametov, S. Yuldasheva","doi":"10.1109/CANET.2007.4401699","DOIUrl":null,"url":null,"abstract":"The quantity ratio simulating the characteristics of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier as a power function of input optical radiation is presented in the work.","PeriodicalId":413993,"journal":{"name":"2007 3rd IEEE/IFIP International Conference in Central Asia on Internet","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier\",\"authors\":\"N. Yunusov, R.K. Atametov, S. Yuldasheva\",\"doi\":\"10.1109/CANET.2007.4401699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The quantity ratio simulating the characteristics of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier as a power function of input optical radiation is presented in the work.\",\"PeriodicalId\":413993,\"journal\":{\"name\":\"2007 3rd IEEE/IFIP International Conference in Central Asia on Internet\",\"volume\":\"39 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 3rd IEEE/IFIP International Conference in Central Asia on Internet\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CANET.2007.4401699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 3rd IEEE/IFIP International Conference in Central Asia on Internet","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CANET.2007.4401699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Mathematical model of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier
The quantity ratio simulating the characteristics of a photodiode and photo receiving device on the field-effect transistor with p-n controlling junction as a current amplifier as a power function of input optical radiation is presented in the work.
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