R. Kirste, S. Mita, P. Reddy, A. Franke, Q. Guo, Ke Wang, R. Collazo, Z. Sitar
{"title":"近紫外激光二极管的发展","authors":"R. Kirste, S. Mita, P. Reddy, A. Franke, Q. Guo, Ke Wang, R. Collazo, Z. Sitar","doi":"10.1109/rapid.2019.8864425","DOIUrl":null,"url":null,"abstract":"The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.","PeriodicalId":143675,"journal":{"name":"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of Near UV Laser Diodes\",\"authors\":\"R. Kirste, S. Mita, P. Reddy, A. Franke, Q. Guo, Ke Wang, R. Collazo, Z. Sitar\",\"doi\":\"10.1109/rapid.2019.8864425\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.\",\"PeriodicalId\":143675,\"journal\":{\"name\":\"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/rapid.2019.8864425\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/rapid.2019.8864425","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The development of near ultraviolet laser diodes based on the AlGaN materials system on single crystal GaN substrates is presented. This includes growth of relaxed Ga-rich AlGaN layers, design of UV laser diodes, as well as discussion of the electrical and optical properties. We show that with the demonstration of optically pumped lasers, a pathway toward electrically injected laser diodes is available.
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