Electrical characterisation of β-Ga2O3 Schottky diode for deep UV sensor applications

β-Ga2O3 is a promising semiconductor for electronic devices. In the present work we have demonstrated a novel method for manufacturing a β-Ga2O3 Schottky diode, in which the same electrode material is used for both contacts. The device is tested it for its applicability in deep UV sensing. Devices were manufactured directly onto β-Ga2O3 (010) wafer material. From the perspective of diode performance, a high rectification ratio of 1.5x107 and high forward current of 17.58 mA/cm2 at −5 V bias was obtained. A responsivity of 12.5 mA/W was recorded when irradiated with light possessing a wavelength of 254 nm. Importantly, detailed analysis is conducted in order to evaluate the performance of the Schottky diode using Cheung’s and Norde’s methods allowing for accurate calculation of the Schottky barrier height in this device.