D. Schwantuschke, P. Bruckner, R. Quay, M. Mikulla, O. Ambacher, I. Kallfass
{"title":"基于100nm AlGaN/GaN HEMT技术的u波段宽带功率放大器MMIC","authors":"D. Schwantuschke, P. Bruckner, R. Quay, M. Mikulla, O. Ambacher, I. Kallfass","doi":"10.23919/EUMC.2012.6459381","DOIUrl":null,"url":null,"abstract":"The design and manufacture of a three-stage broadband power amplifier is presented in this paper. The amplifier MMIC is realized using AlGaN/GaN HEMTs with a gate-length of 100 nm in a grounded coplanar transmission line technology. A small-signal gain of over 20 dB was measured in the frequency range from 38 to 62 GHz (U-band) for the designed amplifier. This corresponds to a very high small-signal bandwidth of over 48 %. Related to the current-gain cutoff frequency, the bandwidth of the amplifier is 30 % of fT and the gain-bandwidth-product is approximately five times fT. Furthermore, a high continuous-wave saturated output power of 25.8 dBm (380 mW) and a high saturated power density of over 1 W/mm in the output stage are provided by the MMIC.","PeriodicalId":243164,"journal":{"name":"2012 7th European Microwave Integrated Circuit Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology\",\"authors\":\"D. Schwantuschke, P. Bruckner, R. Quay, M. Mikulla, O. Ambacher, I. Kallfass\",\"doi\":\"10.23919/EUMC.2012.6459381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and manufacture of a three-stage broadband power amplifier is presented in this paper. The amplifier MMIC is realized using AlGaN/GaN HEMTs with a gate-length of 100 nm in a grounded coplanar transmission line technology. A small-signal gain of over 20 dB was measured in the frequency range from 38 to 62 GHz (U-band) for the designed amplifier. This corresponds to a very high small-signal bandwidth of over 48 %. Related to the current-gain cutoff frequency, the bandwidth of the amplifier is 30 % of fT and the gain-bandwidth-product is approximately five times fT. Furthermore, a high continuous-wave saturated output power of 25.8 dBm (380 mW) and a high saturated power density of over 1 W/mm in the output stage are provided by the MMIC.\",\"PeriodicalId\":243164,\"journal\":{\"name\":\"2012 7th European Microwave Integrated Circuit Conference\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 7th European Microwave Integrated Circuit Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMC.2012.6459381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 7th European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMC.2012.6459381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A U-band broadband power amplifier MMIC in 100 nm AlGaN/GaN HEMT technology
The design and manufacture of a three-stage broadband power amplifier is presented in this paper. The amplifier MMIC is realized using AlGaN/GaN HEMTs with a gate-length of 100 nm in a grounded coplanar transmission line technology. A small-signal gain of over 20 dB was measured in the frequency range from 38 to 62 GHz (U-band) for the designed amplifier. This corresponds to a very high small-signal bandwidth of over 48 %. Related to the current-gain cutoff frequency, the bandwidth of the amplifier is 30 % of fT and the gain-bandwidth-product is approximately five times fT. Furthermore, a high continuous-wave saturated output power of 25.8 dBm (380 mW) and a high saturated power density of over 1 W/mm in the output stage are provided by the MMIC.
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