纳米级CMOS工艺中射频ESD保护LASCR器件的测试结构

2016 International Conference on Microelectronic Test Structures (ICMTS) Pub Date : 2016-05-20 DOI:10.1109/ICMTS.2016.7476183

Chun-Yu Lin, Rong-Kun Chang

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引用次数: 1

摘要

本文研究了电感辅助硅控整流器(LASCR)的测试结构，以保护射频(RF)集成电路免受静电放电(ESD)损伤。在硅芯片上验证，在电感的辅助下，LASCR可以提供良好的ESD鲁棒性和射频性能。激光激光器具有较好的性能，非常适合于千兆赫射频应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Test structures of LASCR device for RF ESD protection in nanoscale CMOS process

The test structures of inductor-assisted silicon-controlled rectifier (LASCR) are investigated in this work to protect the radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages. Verified in silicon chip, the LASCR with the assistance of inductor can provide both good ESD robustness and RF performances. With the better performances, the LASCR is very suitable for gigahertz RF applications.

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来源期刊

2016 International Conference on Microelectronic Test Structures (ICMTS)

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