{"title":"内置温度传感器,用于微电子结构的在线热监测","authors":"Karim Arabi, B. Kaminska","doi":"10.1109/ICCD.1997.628909","DOIUrl":null,"url":null,"abstract":"Built-in temperature sensors increase the system reliability by predicting eventual faults caused by excessive chip temperatures. In this paper, simple and efficient built-in temperature sensors for the on-line thermal monitoring of microelectronic structures are introduced. The proposed temperature sensors produce a signal oscillating at a frequency proportional to the temperature of the microelectronic structure and therefore they are compatible to the oscillation-test method. Design and detailed characteristics of the sensors proposed based on CMOS 1.2 /spl mu/m technology parameters are presented. The fabrication results show a small spread in the nominal oscillation frequency of sensors implemented and a good sensitivity of the oscillation frequency with respect to temperature variations. The sensors proposed require very small power dissipation and silicon area.","PeriodicalId":154864,"journal":{"name":"Proceedings International Conference on Computer Design VLSI in Computers and Processors","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"Built-in temperature sensors for on-line thermal monitoring of microelectronic structures\",\"authors\":\"Karim Arabi, B. Kaminska\",\"doi\":\"10.1109/ICCD.1997.628909\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Built-in temperature sensors increase the system reliability by predicting eventual faults caused by excessive chip temperatures. In this paper, simple and efficient built-in temperature sensors for the on-line thermal monitoring of microelectronic structures are introduced. The proposed temperature sensors produce a signal oscillating at a frequency proportional to the temperature of the microelectronic structure and therefore they are compatible to the oscillation-test method. Design and detailed characteristics of the sensors proposed based on CMOS 1.2 /spl mu/m technology parameters are presented. The fabrication results show a small spread in the nominal oscillation frequency of sensors implemented and a good sensitivity of the oscillation frequency with respect to temperature variations. The sensors proposed require very small power dissipation and silicon area.\",\"PeriodicalId\":154864,\"journal\":{\"name\":\"Proceedings International Conference on Computer Design VLSI in Computers and Processors\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-10-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Conference on Computer Design VLSI in Computers and Processors\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCD.1997.628909\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Computer Design VLSI in Computers and Processors","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCD.1997.628909","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Built-in temperature sensors for on-line thermal monitoring of microelectronic structures
Built-in temperature sensors increase the system reliability by predicting eventual faults caused by excessive chip temperatures. In this paper, simple and efficient built-in temperature sensors for the on-line thermal monitoring of microelectronic structures are introduced. The proposed temperature sensors produce a signal oscillating at a frequency proportional to the temperature of the microelectronic structure and therefore they are compatible to the oscillation-test method. Design and detailed characteristics of the sensors proposed based on CMOS 1.2 /spl mu/m technology parameters are presented. The fabrication results show a small spread in the nominal oscillation frequency of sensors implemented and a good sensitivity of the oscillation frequency with respect to temperature variations. The sensors proposed require very small power dissipation and silicon area.