一个精确的,低阻抗,低差的亚v带隙基准

Kin Keung Jeff Lau
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引用次数: 2

摘要

本文提出了一种紧凑、精确的亚1v低阻抗、低差带隙基准电路。首先,一个新的1V带隙铁芯(corel)通过简单地添加两个电阻到通用铁芯。利用这一概念,提出了一个改进版本(核心2)来产生一个低于1v(在设计示例中为0.9V)的带隙基准,可以从高于Vbe的一点设置到正常带隙电压。两个核心都在低差和低输出阻抗配置。电路思想在90nm BiCMOS技术上实现。仿真结果表明,在200℃的温度范围内,芯1可以实现20ppm的在线和负载调节。Core 2可以实现15ppm的在线和负载调节。两个核心都可以在CMOS工艺中使用寄生PNP器件实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An accurate, low impedance, low dropout sub-V bandgap reference
A compact, accurate sub-1V low impedance, low dropout bandgap reference is presented in this paper. Firstly, a new 1V bandgap core (corel) is introduced by the simple addition of two resistors to the generic core. Using this concept, an improved version (core 2) is presented to generate a sub-1V(0.9V in the design example) bandgap reference that can be set from a bit above Vbe, up to the normal bandgap voltage. Both cores are in low dropout and low output impedance configurations. The circuit idea is realized in 90nm BiCMOS technology. Simulation results show that over a 200oC temperature range, core 1 can achieve 20ppm over line and load regulation. Core 2 can achieve 15ppm over line and load regulation. Both cores can be realized in a CMOS process using parasitic PNP devices.
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