A new method for determining the gate resistance and inductance of GaN HEMTs based on the extrema points of Z11 curves

This paper presents a new method for calculating the gate resistance Rg and inductance Lg, of GaN HEMTs. The method consists in forward biasing the gate with low Igs currents (Igs≫0; 0≪Vgs≪Vbi; drain open) and is based on the extrema of Z11 curves. Rg and Lg are determined from the extrema of Z11 curves measured (after conversion of S to Z parameters) at single DC gate forward current. This new method differs from those previously published [3,6] in that it avoids the use of the resonance frequency in the imaginary part of Z11 and the large DC gate forward current. The good agreement between experimental and model data confirms the validity of the proposed method.