P3HT:F8T2共混物的ptft

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS) Pub Date : 2012-03-14 DOI:10.1109/ICCDCS.2012.6188917

M. Avila, F. Ulloa, J. Sánchez, M. Estrada

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引用次数: 1

摘要

在本文中，我们表征了MIS结构和由P3HT:F8T2作为有源层和PMMA作为电介质的共混物制成的ptft。利用CV曲线分析了介电介质与有源层之间的界面特性，并与P3HT和F8T2作为有源层进行了比较。得到并分析了迁移率及其与栅极电压、PTFTs有源层DOS态分布及其他器件参数的关系。结果表明，共混物中DOS分布的特征温度在P3HT中最低，在共混物中略有增加，但在F8T2 ptft中显著增加，而共混物的局域态密度最高。迁移率低于P3HT器件，但高于F8T2器件。界面态密度也增加了。

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PTFTs with blends of P3HT:F8T2

In this paper, we characterize MIS structures and PTFTs made with blends of P3HT:F8T2 as active layer and PMMA as dielectric. The properties of the interface between the dielectric and the active layer are analyzed using CV curves and compared to those obtained for P3HT and F8T2 as active layer. Mobility and its dependence with gate voltage, the distribution of states DOS in the active layer of the PTFTs and other device parameters were obtained and analyzed. It was found that the characteristic temperature of the distribution of States, DOS in P3HT is the lowest, increasing slightly for the blend, but quite significant in F8T2 PTFTs, while the density of localized states is highest for the blend. Mobility resulted lower than for P3HT devices, but higher than for F8T2. The interface density of states also increases.

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来源期刊

2012 8th International Caribbean Conference on Devices, Circuits and Systems (ICCDCS)

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