正常关闭AlGaN/GaN hemt的凹槽和P-GaN再生栅的开发

2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) Pub Date : 2020-06-01 DOI:10.23919/MIXDES49814.2020.9155649

Chaymaa Haloui, G. Toulon, J. Tasselli, Y. Cordier, É. Frayssinet, K. Isoird, F. Morancho, M. Gavelle

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引用次数: 0

摘要

提出了一种新的正常关闭的AlGaN/GaN HEMT结构。在栅极凹槽之后，P-GaN层在AlGaN/GaN异质结构上的再生使得增强模式得以实现。通过仿真结果证明了阈值电压向正值的偏移。对浇口凹槽的刻蚀深度进行了精确控制。

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Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs

A new normally-off AlGaN/GaN HEMT structure is proposed. The regrowth of a P-GaN layer on the AlGaN/GaN heterostructure after the gate recess allows the achievement of the enhancement mode. A shift in the threshold voltage to positive values has been proved through simulation results. A precise control of the etch depth for the gate recess is detailed.

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2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)

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