功率SiC MOSFET控制驱动器的比较研究

2019 IEEE XXVIII International Scientific Conference Electronics (ET) Pub Date : 2019-09-01 DOI:10.1109/ET.2019.8878323

D. Dankov, P. Prodanov

{"title":"功率SiC MOSFET控制驱动器的比较研究","authors":"D. Dankov, P. Prodanov","doi":"10.1109/ET.2019.8878323","DOIUrl":null,"url":null,"abstract":"This paper examines the properties and benefits of two types of control drivers for SiC MOSFET transistors. A comparative study of the drivers has been done with regard to turn-on and turn-off times of different types of transistors and also with regard to the quantity of the losses in the drivers at different frequencies.","PeriodicalId":306452,"journal":{"name":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Comparative study of power SiC MOSFET control drivers\",\"authors\":\"D. Dankov, P. Prodanov\",\"doi\":\"10.1109/ET.2019.8878323\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper examines the properties and benefits of two types of control drivers for SiC MOSFET transistors. A comparative study of the drivers has been done with regard to turn-on and turn-off times of different types of transistors and also with regard to the quantity of the losses in the drivers at different frequencies.\",\"PeriodicalId\":306452,\"journal\":{\"name\":\"2019 IEEE XXVIII International Scientific Conference Electronics (ET)\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 IEEE XXVIII International Scientific Conference Electronics (ET)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ET.2019.8878323\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE XXVIII International Scientific Conference Electronics (ET)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ET.2019.8878323","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 5

摘要

本文研究了两种用于SiC MOSFET晶体管的控制驱动器的性能和优点。对驱动器进行了比较研究，比较了不同类型晶体管的导通和关断时间以及驱动器在不同频率下的损耗量。

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Comparative study of power SiC MOSFET control drivers

This paper examines the properties and benefits of two types of control drivers for SiC MOSFET transistors. A comparative study of the drivers has been done with regard to turn-on and turn-off times of different types of transistors and also with regard to the quantity of the losses in the drivers at different frequencies.

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2019 IEEE XXVIII International Scientific Conference Electronics (ET)

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