采用选择性区域混合的InGaAs/GaAs量子点红外探测器的光谱调谐

2010 Conference on Optoelectronic and Microelectronic Materials and Devices Pub Date : 2010-12-01 DOI:10.1109/COMMAD.2010.5699773

I. Mckerracher, J. Wong-Leung, G. Jolley, L. Fu, H. Tan, C. Jagadish

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引用次数: 1

摘要

量子点混合是一种用于调谐光电器件的后生长方法。SiO2封盖层可以通过无杂质空位无序化来增强这些效果，而TiO2封盖层可以减少混合。本研究通过选择性混合制备了多色量子点红外探测器，并对四种不同的包封剂进行了研究。

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Spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors using selective-area intermixing

Quantum dot intermixing is a post-growth approach to tuning optoelectronic devices. SiO2 capping layers can enhance these effects through impurityfree vacancy disordering, whereas TiO2 caps can decrease intermixing. In this study, multi-colour quantum dot infrared photodetectors were fabricated through selective intermixing and four different encapsulants were investigated.

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2010 Conference on Optoelectronic and Microelectronic Materials and Devices

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