分子束外延制备SnTe薄膜的表面形貌和电子性能

2022 Compound Semiconductor Week (CSW) Pub Date : 2022-06-01 DOI:10.1002/pssa.202200555

Su Nan, K. Tsuboi, S. Kobayashi, K. Sugimoto, M. Kobayashi

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摘要

采用分子束外延的方法在GaAs(100)衬底上制备了SnTe薄膜，利用扫描电镜(SEM)和霍尔效应测量分别对其表面形貌和电子性能进行了表征。扫描电镜观察到材料表面呈点状分布，这可能与Te的偏析有关。由于薄膜中含有六方Te，导致薄膜的电子性能较差。

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Surface morphology and electronic properties of SnTe films prepared by molecular beam epitaxy

SnTe films are prepared on GaAs (100) substrates by molecular beam epitaxy, and the surface morphology and electronic property are characterized using scanning electron microscope (SEM) and Hall effect measurements, respectively. A distribution of dotted materials on the surface were observed by SEM, which was probably related to segregated Te. The inclusion of hexagonal Te in the film has results in poor electronic property of the film.

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2022 Compound Semiconductor Week (CSW)

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