超高速MQW电吸收调制器研制过程的数值模拟

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259029

Y. Miyazaki, S. Tokizaki, E. Omura, Y. Mitsui

{"title":"超高速MQW电吸收调制器研制过程的数值模拟","authors":"Y. Miyazaki, S. Tokizaki, E. Omura, Y. Mitsui","doi":"10.1109/NUSOD.2003.1259029","DOIUrl":null,"url":null,"abstract":"Numerical simulations have been applied in developing 10 Gbps EAM-DFB-LDs and 40 Gbps EAMs based on InGaAs/InGaAsP MQW. Coverage of the numerical approaches includes transmission characteristics and dopant diffusion in EAM as well as the extinction ratio and chirp of the EAM.","PeriodicalId":206987,"journal":{"name":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical simulations in the development process of ultrahigh- speed MQW electroabsorption modulators\",\"authors\":\"Y. Miyazaki, S. Tokizaki, E. Omura, Y. Mitsui\",\"doi\":\"10.1109/NUSOD.2003.1259029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Numerical simulations have been applied in developing 10 Gbps EAM-DFB-LDs and 40 Gbps EAMs based on InGaAs/InGaAsP MQW. Coverage of the numerical approaches includes transmission characteristics and dopant diffusion in EAM as well as the extinction ratio and chirp of the EAM.\",\"PeriodicalId\":206987,\"journal\":{\"name\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-10-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NUSOD.2003.1259029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2003.1259029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

数值模拟应用于基于InGaAs/InGaAsP MQW的10 Gbps eam - dfb - ld和40 Gbps eam的开发。数值方法的覆盖范围包括EAM的传输特性和掺杂扩散以及EAM的消光比和啁啾。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Numerical simulations in the development process of ultrahigh- speed MQW electroabsorption modulators

Numerical simulations have been applied in developing 10 Gbps EAM-DFB-LDs and 40 Gbps EAMs based on InGaAs/InGaAsP MQW. Coverage of the numerical approaches includes transmission characteristics and dopant diffusion in EAM as well as the extinction ratio and chirp of the EAM.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

自引率

0.00%

发文量