{"title":"梯度自由溶胶-凝胶Pb(Zrx, Ti1-x)O3薄膜","authors":"F. Calame, P. Muralt","doi":"10.1109/ISAF.2007.4393173","DOIUrl":null,"url":null,"abstract":"Pb(Zr<sub>x</sub>,Ti<sub>1-x</sub>)O<sub>3</sub> thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiO<sub>x</sub>/SiO<sub>2</sub>/Si substrates. The usually observed gradient in B-site composition could be reduced from plusmn12 to plusmn2.5 at% amplitude in Zr concentration fluctuations. The obtained 2 mum thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsiv<sub>33f</sub> was obtained as 1620, and the remanent transverse piezoelectric coefficient e<sub>31f</sub>-was measured as -17.7 C/m<sup>2</sup>.","PeriodicalId":321007,"journal":{"name":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Gradient free sol-gel Pb(Zrx, Ti1-x)O3 thin films\",\"authors\":\"F. Calame, P. Muralt\",\"doi\":\"10.1109/ISAF.2007.4393173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Pb(Zr<sub>x</sub>,Ti<sub>1-x</sub>)O<sub>3</sub> thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiO<sub>x</sub>/SiO<sub>2</sub>/Si substrates. The usually observed gradient in B-site composition could be reduced from plusmn12 to plusmn2.5 at% amplitude in Zr concentration fluctuations. The obtained 2 mum thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsiv<sub>33f</sub> was obtained as 1620, and the remanent transverse piezoelectric coefficient e<sub>31f</sub>-was measured as -17.7 C/m<sup>2</sup>.\",\"PeriodicalId\":321007,\"journal\":{\"name\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2007.4393173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2007.4393173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Pb(Zrx,Ti1-x)O3 thin films of homogeneous composition were synthesized by means of a modified sol-gel route on Pt(111)/TiOx/SiO2/Si substrates. The usually observed gradient in B-site composition could be reduced from plusmn12 to plusmn2.5 at% amplitude in Zr concentration fluctuations. The obtained 2 mum thick, dense and crack free films exhibited a {100}-texture index of 98.4%. Grain diameters increased at the same time by 50%. Dielectric and piezoelectric properties were remarkably improved. The relative dielectric constant epsiv33f was obtained as 1620, and the remanent transverse piezoelectric coefficient e31f-was measured as -17.7 C/m2.