M. Hobbs, S. Das, C. H. Tan, J. David, S. Krishna, J. B. Rodriguez, E. Plis
{"title":"在GaAs衬底上生长的高检出率MWIR ii型超晶格","authors":"M. Hobbs, S. Das, C. H. Tan, J. David, S. Krishna, J. B. Rodriguez, E. Plis","doi":"10.1109/PHO.2011.6110410","DOIUrl":null,"url":null,"abstract":"Specific detectivity values of 1.0×10<sup>11</sup>, 2.8×10<sup>9</sup> and 5.8×108cmHz<sup>1/2</sup>/W were measured at 77, 200 and 290K, respectively, on a MWIR Type-II InAs/GaSb Superlattice photodiode grown on a GaAs substrate.","PeriodicalId":173679,"journal":{"name":"IEEE Photonic Society 24th Annual Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High detectivity MWIR Type-II superlattice grown on a GaAs substrate\",\"authors\":\"M. Hobbs, S. Das, C. H. Tan, J. David, S. Krishna, J. B. Rodriguez, E. Plis\",\"doi\":\"10.1109/PHO.2011.6110410\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Specific detectivity values of 1.0×10<sup>11</sup>, 2.8×10<sup>9</sup> and 5.8×108cmHz<sup>1/2</sup>/W were measured at 77, 200 and 290K, respectively, on a MWIR Type-II InAs/GaSb Superlattice photodiode grown on a GaAs substrate.\",\"PeriodicalId\":173679,\"journal\":{\"name\":\"IEEE Photonic Society 24th Annual Meeting\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-12-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonic Society 24th Annual Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PHO.2011.6110410\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonic Society 24th Annual Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHO.2011.6110410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High detectivity MWIR Type-II superlattice grown on a GaAs substrate
Specific detectivity values of 1.0×1011, 2.8×109 and 5.8×108cmHz1/2/W were measured at 77, 200 and 290K, respectively, on a MWIR Type-II InAs/GaSb Superlattice photodiode grown on a GaAs substrate.
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