利用条纹相机直接光发射监测分析IGBT破坏机理

2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) Pub Date : 2017-05-01 DOI:10.23919/ISPSD.2017.7988945

T. Matsudai, K. Endo, T. Ogura, T. Matsumoto, K. Uchiyama, F. Niikura, K. Koshikawa

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引用次数: 4

摘要

本文提出了一种利用条纹相机直接监测igbt(绝缘栅双极晶体管)雪崩过程中光电发射的方法。igbt的发展是为了改善导通损耗和开关损耗之间的权衡关系。提高可靠性也是一个非常重要的问题。为了提高可靠性，直接研究igbt的雪崩现象是非常重要的。在雪崩操作过程中，众所周知，设备会发出可见光。这是在无阻尼电感开关(UIS)条件下成功地观测到雪崩现象的光电发射的研究。我们还测量了边缘终止区的移动发射区域。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Direct photo emission monitoring for analysis of IGBT destruction mechanism using streak camera

This paper proposes a direct photo emission monitoring during avalanche operation for IGBTs (Insulated Gate Bipolar Transistors) using a streak camera. IGBTs have been developed to improve trade-off relation between on-state losses and switching losses. And also reliability enhancement is very important issue. To enhance reliability, it is important to investigate avalanche phenomenon of IGBTs, directly. During avalanche operation, it is well known that visible light is emitted from the device. This is the study to succeed in observing photo emission directly from avalanche phenomena under UIS (Undamped Inductive Switching) condition of IGBTs. We have also measured moving emission region in edge termination area.

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2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)

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